STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6

RS Stock No.: 202-5496Brand: STMicroelectronicsManufacturers Part No.: STB33N60DM6
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

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Stock information temporarily unavailable.

AED 67.94

AED 33.968 Each (In a Pack of 2) (ex VAT)

AED 71.34

AED 35.666 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6
Select packaging type

AED 67.94

AED 33.968 Each (In a Pack of 2) (ex VAT)

AED 71.34

AED 35.666 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
2 - 48AED 33.968AED 67.94
50 - 98AED 24.728AED 49.46
100 - 248AED 24.202AED 48.40
250 - 498AED 24.045AED 48.09
500+AED 23.73AED 47.46

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more