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N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STMicroelectronics STB60NF06LT4

RS Stock No.: 165-6855Brand: STMicroelectronicsManufacturers Part No.: STB60NF06LT4
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

9.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.4mm

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Height

4.6mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

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AED 5,700.00

AED 5.70 Each (On a Reel of 1000) (ex VAT)

AED 5,985.00

AED 5.985 Each (On a Reel of 1000) (inc. VAT)

N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STMicroelectronics STB60NF06LT4

AED 5,700.00

AED 5.70 Each (On a Reel of 1000) (ex VAT)

AED 5,985.00

AED 5.985 Each (On a Reel of 1000) (inc. VAT)

N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STMicroelectronics STB60NF06LT4
Stock information temporarily unavailable.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

9.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.4mm

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Height

4.6mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more