Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Width
9.35mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
4.6mm
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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AED 8.45
Each (Supplied on a Reel) (ex VAT)
AED 8.872
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
5
AED 8.45
Each (Supplied on a Reel) (ex VAT)
AED 8.872
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 20 | AED 8.45 | AED 42.25 |
25 - 45 | AED 8.05 | AED 40.25 |
50 - 120 | AED 7.20 | AED 36.00 |
125 - 245 | AED 6.50 | AED 32.50 |
250+ | AED 6.15 | AED 30.75 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Width
9.35mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
4.6mm
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.