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STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4

RS Stock No.: 795-6944Brand: STMicroelectronicsManufacturers Part No.: STB60NF06LT4
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 47.78

AED 9.555 Each (In a Pack of 5) (ex VAT)

AED 50.17

AED 10.033 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4
Select packaging type

AED 47.78

AED 9.555 Each (In a Pack of 5) (ex VAT)

AED 50.17

AED 10.033 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 20AED 9.555AED 47.78
25 - 45AED 9.082AED 45.41
50 - 120AED 8.138AED 40.69
125 - 245AED 7.35AED 36.75
250+AED 6.982AED 34.91

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

4.6mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more