Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35 mm
Height
4.6mm
Automotive Standard
AEC-Q101
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 48.04
AED 9.608 Each (In a Pack of 5) (ex VAT)
AED 50.44
AED 10.088 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 48.04
AED 9.608 Each (In a Pack of 5) (ex VAT)
AED 50.44
AED 10.088 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | AED 9.608 | AED 48.04 |
| 25 - 45 | AED 9.082 | AED 45.41 |
| 50 - 120 | AED 8.19 | AED 40.95 |
| 125 - 245 | AED 7.35 | AED 36.75 |
| 250+ | AED 7.035 | AED 35.18 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35 mm
Height
4.6mm
Automotive Standard
AEC-Q101
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


