N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK STMicroelectronics STD150N3LLH6

RS Stock No.: 760-9540Brand: STMicroelectronicsManufacturers Part No.: STD150N3LLH6
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

40 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.6mm

Width

6.2mm

Series

DeepGate, STripFET

Height

2.4mm

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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AED 2.25

Each (In a Pack of 5) (ex VAT)

AED 2.362

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK STMicroelectronics STD150N3LLH6
Select packaging type

AED 2.25

Each (In a Pack of 5) (ex VAT)

AED 2.362

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK STMicroelectronics STD150N3LLH6
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

40 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.6mm

Width

6.2mm

Series

DeepGate, STripFET

Height

2.4mm

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more