Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
7.5 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
AED 5,118.75
AED 2.048 Each (On a Reel of 2500) (ex VAT)
AED 5,374.69
AED 2.15 Each (On a Reel of 2500) (inc. VAT)
2500
AED 5,118.75
AED 2.048 Each (On a Reel of 2500) (ex VAT)
AED 5,374.69
AED 2.15 Each (On a Reel of 2500) (inc. VAT)
2500
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
7.5 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details