STMicroelectronics STripFET H7 Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25N10F7

RS Stock No.: 792-5713Brand: STMicroelectronicsManufacturers Part No.: STD25N10F7
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Technical Document

Specifications

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

100V

Series

STripFET H7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Automotive Standard

No

Product details

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 38.25

AED 7.65 Each (In a Pack of 5) (ex VAT)

AED 40.16

AED 8.033 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25N10F7
Select packaging type

AED 38.25

AED 7.65 Each (In a Pack of 5) (ex VAT)

AED 40.16

AED 8.033 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET H7 Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25N10F7

Stock information temporarily unavailable.

Select packaging type

QuantityUnit pricePer Pack
5 - 20AED 7.65AED 38.25
25 - 45AED 7.222AED 36.11
50 - 120AED 6.527AED 32.64
125 - 245AED 5.885AED 29.42
250+AED 5.564AED 27.82

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Technical Document

Specifications

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

100V

Series

STripFET H7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Automotive Standard

No

Product details

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more