STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4

RS Stock No.: 687-5071Brand: STMicroelectronicsManufacturers Part No.: STD60NF06T4
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

STripFET II

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

49 nC @ 10 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 49.09

AED 9.818 Each (In a Pack of 5) (ex VAT)

AED 51.54

AED 10.309 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4
Select packaging type

AED 49.09

AED 9.818 Each (In a Pack of 5) (ex VAT)

AED 51.54

AED 10.309 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 5AED 9.818AED 49.09
10 - 95AED 8.40AED 42.00
100 - 495AED 6.248AED 31.24
500 - 995AED 5.302AED 26.51
1000+AED 4.252AED 21.26

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

STripFET II

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

49 nC @ 10 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more