Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Series
STripFET F3
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
33.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
AED 17,325.00
AED 6.93 Each (On a Reel of 2500) (ex VAT)
AED 18,191.25
AED 7.276 Each (On a Reel of 2500) (inc. VAT)
2500
AED 17,325.00
AED 6.93 Each (On a Reel of 2500) (ex VAT)
AED 18,191.25
AED 7.276 Each (On a Reel of 2500) (inc. VAT)
2500
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Please check again later.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Series
STripFET F3
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
33.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.