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N-Channel MOSFET, 80 A, 25 V, 3-Pin DPAK STMicroelectronics STD95N2LH5

RS Stock No.: 760-9957Brand: STMicroelectronicsManufacturers Part No.: STD95N2LH5
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Package Type

DPAK (TO-252)

Series

STripFET V

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

13.4 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.6mm

Width

6.2mm

Transistor Material

Si

Height

2.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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AED 31.75

AED 6.35 Each (In a Pack of 5) (ex VAT)

AED 33.34

AED 6.668 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 80 A, 25 V, 3-Pin DPAK STMicroelectronics STD95N2LH5
Select packaging type

AED 31.75

AED 6.35 Each (In a Pack of 5) (ex VAT)

AED 33.34

AED 6.668 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 80 A, 25 V, 3-Pin DPAK STMicroelectronics STD95N2LH5
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 20AED 6.35AED 31.75
25 - 45AED 6.05AED 30.25
50 - 120AED 5.45AED 27.25
125 - 245AED 5.00AED 25.00
250+AED 4.85AED 24.25

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Package Type

DPAK (TO-252)

Series

STripFET V

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

13.4 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.6mm

Width

6.2mm

Transistor Material

Si

Height

2.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more