Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
ISOTOP
Mount Type
Panel
Pin Count
4
Maximum Drain Source Resistance Rds
130mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
307.5nC
Maximum Power Dissipation Pd
460W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
25.5 mm
Length
38.2mm
Height
9.1mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 1,504.42
AED 150.442 Each (In a Tube of 10) (ex VAT)
AED 1,579.64
AED 157.964 Each (In a Tube of 10) (inc. VAT)
10
AED 1,504.42
AED 150.442 Each (In a Tube of 10) (ex VAT)
AED 1,579.64
AED 157.964 Each (In a Tube of 10) (inc. VAT)
Stock information temporarily unavailable.
10
| Quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 40 | AED 150.442 | AED 1,504.42 |
| 50 - 90 | AED 143.648 | AED 1,436.48 |
| 100 - 190 | AED 126.688 | AED 1,266.88 |
| 200 - 490 | AED 118.235 | AED 1,182.35 |
| 500+ | AED 110.638 | AED 1,106.38 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
ISOTOP
Mount Type
Panel
Pin Count
4
Maximum Drain Source Resistance Rds
130mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
307.5nC
Maximum Power Dissipation Pd
460W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
25.5 mm
Length
38.2mm
Height
9.1mm
Standards/Approvals
No
Automotive Standard
No
Product details


