Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
ISOTOP
Mount Type
Panel
Pin Count
4
Maximum Drain Source Resistance Rds
130mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
307.5nC
Maximum Power Dissipation Pd
460W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
25.5 mm
Length
38.2mm
Height
9.1mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 1,476.30
AED 147.63 Each (In a Tube of 10) (ex VAT)
AED 1,550.12
AED 155.012 Each (In a Tube of 10) (inc. VAT)
10
AED 1,476.30
AED 147.63 Each (In a Tube of 10) (ex VAT)
AED 1,550.12
AED 155.012 Each (In a Tube of 10) (inc. VAT)
Stock information temporarily unavailable.
10
| Quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 40 | AED 147.63 | AED 1,476.30 |
| 50 - 90 | AED 140.962 | AED 1,409.62 |
| 100 - 190 | AED 124.32 | AED 1,243.20 |
| 200 - 490 | AED 116.025 | AED 1,160.25 |
| 500+ | AED 108.57 | AED 1,085.70 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
ISOTOP
Mount Type
Panel
Pin Count
4
Maximum Drain Source Resistance Rds
130mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
307.5nC
Maximum Power Dissipation Pd
460W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
25.5 mm
Length
38.2mm
Height
9.1mm
Standards/Approvals
No
Automotive Standard
No
Product details


