Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
500 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
310 nC @ 10 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 168.52
AED 168.52 Each (ex VAT)
AED 176.95
AED 176.95 Each (inc. VAT)
1
AED 168.52
AED 168.52 Each (ex VAT)
AED 176.95
AED 176.95 Each (inc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | AED 168.52 |
| 10 - 49 | AED 155.50 |
| 50 - 99 | AED 148.42 |
| 100 - 199 | AED 130.88 |
| 200+ | AED 122.17 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
500 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
310 nC @ 10 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Product details


