Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STMicroelectronics STEF512GR

RS Stock No.: 203-3437Brand: STMicroelectronicsManufacturers Part No.: STEF512GR
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3 A, 4 A

Maximum Drain Source Voltage

5 V, 12 V

Series

E-Fuse

Package Type

TSOT23-8L

Pin Count

8

Maximum Drain Source Resistance

0.04 Ω

Maximum Gate Threshold Voltage

15V

Number of Elements per Chip

2

Transistor Material

Si

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AED 9.35

Each (ex VAT)

AED 9.82

Each (inc VAT)

Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STMicroelectronics STEF512GR
Select packaging type

AED 9.35

Each (ex VAT)

AED 9.82

Each (inc VAT)

Dual N-Channel MOSFET, 3 A, 4 A, 5 V, 12 V, 8-Pin TSOT23-8L STMicroelectronics STEF512GR
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 49AED 9.35
50 - 99AED 7.90
100 - 249AED 7.05
250 - 999AED 5.25
1000+AED 5.00

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3 A, 4 A

Maximum Drain Source Voltage

5 V, 12 V

Series

E-Fuse

Package Type

TSOT23-8L

Pin Count

8

Maximum Drain Source Resistance

0.04 Ω

Maximum Gate Threshold Voltage

15V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more