Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Series
FDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.4mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.6mm
Height
16.4mm
Product details
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
AED 514.50
AED 10.29 Each (In a Tube of 50) (ex VAT)
AED 540.22
AED 10.804 Each (In a Tube of 50) (inc. VAT)
50
AED 514.50
AED 10.29 Each (In a Tube of 50) (ex VAT)
AED 540.22
AED 10.804 Each (In a Tube of 50) (inc. VAT)
50
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Series
FDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.4mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.6mm
Height
16.4mm
Product details