Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
190mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
30W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
16.4mm
Automotive Standard
No
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 446.25
AED 8.925 Each (In a Tube of 50) (ex VAT)
AED 468.56
AED 9.371 Each (In a Tube of 50) (inc. VAT)
50
AED 446.25
AED 8.925 Each (In a Tube of 50) (ex VAT)
AED 468.56
AED 9.371 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | AED 8.925 | AED 446.25 |
| 100 - 450 | AED 7.402 | AED 370.12 |
| 500 - 950 | AED 7.192 | AED 359.62 |
| 1000 - 4950 | AED 7.035 | AED 351.75 |
| 5000+ | AED 6.982 | AED 349.12 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
190mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
30W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
16.4mm
Automotive Standard
No
Product details


