STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STF26NM60N

RS Stock No.: 103-2000Brand: STMicroelectronicsManufacturers Part No.: STF26NM60N
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.4mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 813.75

AED 16.275 Each (In a Tube of 50) (ex VAT)

AED 854.44

AED 17.089 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STF26NM60N

50

Available in multiples of 50
50AED 813.75
100AED 1,627.50
150AED 2,441.25
200AED 3,255.00
250AED 4,068.75
300AED 4,882.50
350AED 5,696.25
400AED 6,510.00
450AED 7,323.75
500AED 8,137.50
550AED 8,951.25
600AED 9,765.00
650AED 10,578.75
700AED 11,392.50
750AED 12,206.25

AED 813.75

AED 16.275 Each (In a Tube of 50) (ex VAT)

AED 854.44

AED 17.089 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STF26NM60N

Stock information temporarily unavailable.

50

Available in multiples of 50
50AED 813.75
100AED 1,627.50
150AED 2,441.25
200AED 3,255.00
250AED 4,068.75
300AED 4,882.50
350AED 5,696.25
400AED 6,510.00
450AED 7,323.75
500AED 8,137.50
550AED 8,951.25
600AED 9,765.00
650AED 10,578.75
700AED 11,392.50
750AED 12,206.25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.4mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more