STMicroelectronics STGD5NB120SZT4, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
690ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
150°C
Width
6.4 mm
Height
2.2mm
Length
6.2mm
Standards/Approvals
JEDEC JESD97, ECOPACK
Series
H
Energy Rating
12.68mJ
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
AED 39.86
AED 7.972 Each (In a Pack of 5) (ex VAT)
AED 41.85
AED 8.371 Each (In a Pack of 5) (inc. VAT)
5
AED 39.86
AED 7.972 Each (In a Pack of 5) (ex VAT)
AED 41.85
AED 8.371 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | AED 7.972 | AED 39.86 |
| 25 - 45 | AED 7.544 | AED 37.72 |
| 50 - 120 | AED 6.848 | AED 34.24 |
| 125 - 245 | AED 6.152 | AED 30.76 |
| 250+ | AED 5.832 | AED 29.16 |
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
690ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
150°C
Width
6.4 mm
Height
2.2mm
Length
6.2mm
Standards/Approvals
JEDEC JESD97, ECOPACK
Series
H
Energy Rating
12.68mJ
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products