STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP, Panel Mount
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
ISOTOP
Mounting Type
Panel Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
38.2 x 25.5 x 9.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 138.70
Each (ex VAT)
AED 145.64
Each (inc VAT)
Standard
1
AED 138.70
Each (ex VAT)
AED 145.64
Each (inc VAT)
Standard
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 1 | AED 138.70 |
| 2 - 4 | AED 115.10 |
| 5+ | AED 103.65 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
ISOTOP
Mounting Type
Panel Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
38.2 x 25.5 x 9.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products