STMicroelectronics STGP7NC60HD IGBT, 25 A 600 V, 3-Pin TO-220, Through Hole
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 5.35
Each (In a Tube of 50) (ex VAT)
AED 5.618
Each (In a Tube of 50) (inc VAT)
50
AED 5.35
Each (In a Tube of 50) (ex VAT)
AED 5.618
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
| quantity | Unit price | Per Tube |
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| 50 - 50 | AED 5.35 | AED 267.50 |
| 100 - 450 | AED 4.05 | AED 202.50 |
| 500 - 950 | AED 3.40 | AED 170.00 |
| 1000 - 4950 | AED 2.95 | AED 147.50 |
| 5000+ | AED 2.90 | AED 145.00 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products