Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
145A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
441W
Package Type
TO-247-4
Mount Type
Through Hole
Channel Type
Type N
Pin Count
4
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Product Details
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
Stock information temporarily unavailable.
AED 914.85
AED 30.495 Each (In a Tube of 30) (ex VAT)
AED 960.59
AED 32.02 Each (In a Tube of 30) (inc. VAT)
30
AED 914.85
AED 30.495 Each (In a Tube of 30) (ex VAT)
AED 960.59
AED 32.02 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
145A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
441W
Package Type
TO-247-4
Mount Type
Through Hole
Channel Type
Type N
Pin Count
4
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Product Details
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.