STMicroelectronics, Type N-Channel IGBT, 54 A 600 V, 3-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
54A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
JEDEC
Series
SMPS
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
AED 285.69
AED 9.523 Each (In a Tube of 30) (ex VAT)
AED 299.97
AED 9.999 Each (In a Tube of 30) (inc. VAT)
30
AED 285.69
AED 9.523 Each (In a Tube of 30) (ex VAT)
AED 299.97
AED 9.999 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 60 | AED 9.523 | AED 285.69 |
| 90 - 480 | AED 8.881 | AED 266.43 |
| 510 - 960 | AED 8.667 | AED 260.01 |
| 990+ | AED 8.453 | AED 253.59 |
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
54A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
JEDEC
Series
SMPS
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products