Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
RoHS
Width
5.15mm
Series
H
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
AED 31.46
AED 15.729 Each (In a Pack of 2) (ex VAT)
AED 33.03
AED 16.515 Each (In a Pack of 2) (inc. VAT)
Standard
2
AED 31.46
AED 15.729 Each (In a Pack of 2) (ex VAT)
AED 33.03
AED 16.515 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | AED 15.729 | AED 31.46 |
| 20 - 98 | AED 13.803 | AED 27.61 |
| 100 - 198 | AED 12.358 | AED 24.72 |
| 200+ | AED 10.70 | AED 21.40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Operating Temperature
175°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
RoHS
Width
5.15mm
Series
H
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
