STMicroelectronics, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
80A
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
375W
Package Type
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
HB
Automotive Standard
No
Country of Origin
Korea, Republic Of
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
AED 544.10
AED 18.136 Each (In a Tube of 30) (ex VAT)
AED 571.30
AED 19.043 Each (In a Tube of 30) (inc. VAT)
30
AED 544.10
AED 18.136 Each (In a Tube of 30) (ex VAT)
AED 571.30
AED 19.043 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
80A
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
375W
Package Type
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
HB
Automotive Standard
No
Country of Origin
Korea, Republic Of
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products