Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
2.6A
Maximum Drain Source Voltage Vds
1500V
Package Type
H2PAK-2
Series
STH4N150
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
10Ω
Channel Mode
MOSFET
Maximum Power Dissipation Pd
208W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
35.1nC
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
150°C
Transistor Configuration
N Channel Mosfet
Height
15.8mm
Length
10.4mm
Width
4.7mm
Automotive Standard
AEC-Q101
Country of Origin
China
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AED 29.05
AED 29.05 Each (ex VAT)
AED 30.50
AED 30.50 Each (inc. VAT)
1
AED 29.05
AED 29.05 Each (ex VAT)
AED 30.50
AED 30.50 Each (inc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | AED 29.05 |
| 10 - 99 | AED 21.45 |
| 100 - 499 | AED 17.66 |
| 500+ | AED 16.42 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
2.6A
Maximum Drain Source Voltage Vds
1500V
Package Type
H2PAK-2
Series
STH4N150
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
10Ω
Channel Mode
MOSFET
Maximum Power Dissipation Pd
208W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
35.1nC
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
150°C
Transistor Configuration
N Channel Mosfet
Height
15.8mm
Length
10.4mm
Width
4.7mm
Automotive Standard
AEC-Q101
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
