Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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Stock information temporarily unavailable.
AED 21,025.50
AED 7.008 Each (On a Reel of 3000) (ex VAT)
AED 22,076.78
AED 7.358 Each (On a Reel of 3000) (inc. VAT)
3000
AED 21,025.50
AED 7.008 Each (On a Reel of 3000) (ex VAT)
AED 22,076.78
AED 7.358 Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
