Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
8.1mm
Length
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
0.9mm
Country of Origin
China
AED 140.96
AED 28.192 Each (In a Pack of 5) (ex VAT)
AED 148.01
AED 29.602 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 140.96
AED 28.192 Each (In a Pack of 5) (ex VAT)
AED 148.01
AED 29.602 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | AED 28.192 | AED 140.96 |
| 25 - 45 | AED 26.512 | AED 132.56 |
| 50 - 120 | AED 25.095 | AED 125.48 |
| 125 - 245 | AED 23.625 | AED 118.12 |
| 250+ | AED 22.575 | AED 112.88 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
8.1mm
Length
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
0.9mm
Country of Origin
China


