Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 83.21
AED 16.642 Each (In a Pack of 5) (ex VAT)
AED 87.37
AED 17.474 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 83.21
AED 16.642 Each (In a Pack of 5) (ex VAT)
AED 87.37
AED 17.474 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | AED 16.642 | AED 83.21 |
| 10 - 95 | AED 14.122 | AED 70.61 |
| 100 - 495 | AED 11.025 | AED 55.12 |
| 500 - 995 | AED 9.345 | AED 46.72 |
| 1000+ | AED 7.77 | AED 38.85 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details


