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STMicroelectronics N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STP10NK60ZFP

RS Stock No.: 485-7428Brand: STMicroelectronicsManufacturers Part No.: STP10NK60ZFP
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

50 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.3mm

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 71.84

AED 14.368 Each (In a Pack of 5) (ex VAT)

AED 75.43

AED 15.086 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STP10NK60ZFP
Select packaging type

AED 71.84

AED 14.368 Each (In a Pack of 5) (ex VAT)

AED 75.43

AED 15.086 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STP10NK60ZFP
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 5AED 14.368AED 71.84
10 - 95AED 12.206AED 61.03
100 - 495AED 9.528AED 47.64
500 - 995AED 8.086AED 40.43
1000+AED 6.746AED 33.73

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

50 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.3mm

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more