Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
900mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
72nC
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
4.6 mm
Length
10.4mm
Height
9.3mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 467.25
AED 9.345 Each (In a Tube of 50) (ex VAT)
AED 490.61
AED 9.812 Each (In a Tube of 50) (inc. VAT)
50
AED 467.25
AED 9.345 Each (In a Tube of 50) (ex VAT)
AED 490.61
AED 9.812 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | AED 9.345 | AED 467.25 |
| 100 - 450 | AED 7.455 | AED 372.75 |
| 500 - 950 | AED 6.668 | AED 333.38 |
| 1000 - 4950 | AED 5.618 | AED 280.88 |
| 5000+ | AED 5.408 | AED 270.38 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
900mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
72nC
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
4.6 mm
Length
10.4mm
Height
9.3mm
Standards/Approvals
No
Automotive Standard
No
Product details


