N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STMicroelectronics STP16N65M5
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M5
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.4mm
Width
4.6mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
9.15mm
Country of Origin
Malaysia
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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AED 522.50
AED 10.45 Each (In a Tube of 50) (ex VAT)
AED 548.62
AED 10.972 Each (In a Tube of 50) (inc. VAT)
50
AED 522.50
AED 10.45 Each (In a Tube of 50) (ex VAT)
AED 548.62
AED 10.972 Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | AED 10.45 | AED 522.50 |
| 100 - 200 | AED 10.15 | AED 507.50 |
| 250 - 450 | AED 9.95 | AED 497.50 |
| 500 - 950 | AED 9.85 | AED 492.50 |
| 1000+ | AED 9.75 | AED 487.50 |
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M5
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.4mm
Width
4.6mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
9.15mm
Country of Origin
Malaysia
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products