N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 STMicroelectronics STP260N6F6

RS Stock No.: 760-9673PBrand: STMicroelectronicsManufacturers Part No.: STP260N6F6
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

DeepGate, STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

183 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

15.75mm

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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AED 28.70

Each (Supplied in a Tube) (ex VAT)

AED 30.14

Each (Supplied in a Tube) (inc VAT)

N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 STMicroelectronics STP260N6F6
Select packaging type

AED 28.70

Each (Supplied in a Tube) (ex VAT)

AED 30.14

Each (Supplied in a Tube) (inc VAT)

N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 STMicroelectronics STP260N6F6
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 4AED 28.70
5 - 9AED 27.25
10 - 24AED 24.55
25 - 49AED 22.10
50+AED 20.95

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

DeepGate, STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

183 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

15.75mm

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more