Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.4mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
4.6mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
AED 191.62
AED 3.832 Each (In a Tube of 50) (ex VAT)
AED 201.20
AED 4.024 Each (In a Tube of 50) (inc. VAT)
50
AED 191.62
AED 3.832 Each (In a Tube of 50) (ex VAT)
AED 201.20
AED 4.024 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | AED 3.832 | AED 191.62 |
| 100+ | AED 3.622 | AED 181.12 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.4mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
4.6mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details


