SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STP33N60DM6

RS Stock No.: 202-5529Brand: STMicroelectronicsManufacturers Part No.: STP33N60DM6
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

ST

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

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AED 17.55

Each (In a Tube of 50) (ex VAT)

AED 18.428

Each (In a Tube of 50) (inc. VAT)

SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STP33N60DM6

AED 17.55

Each (In a Tube of 50) (ex VAT)

AED 18.428

Each (In a Tube of 50) (inc. VAT)

SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STP33N60DM6
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 50AED 17.55AED 877.50
100 - 200AED 14.60AED 730.00
250 - 450AED 12.70AED 635.00
500 - 950AED 12.35AED 617.50
1000+AED 12.20AED 610.00

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

ST

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more