STMicroelectronics STripFET II N-Channel MOSFET, 38 A, 60 V, 3-Pin TO-220 STP45NF06

RS Stock No.: 168-6105Brand: STMicroelectronicsManufacturers Part No.: STP45NF06
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.15mm

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 204.75

AED 4.095 Each (In a Tube of 50) (ex VAT)

AED 214.99

AED 4.30 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 38 A, 60 V, 3-Pin TO-220 STP45NF06

AED 204.75

AED 4.095 Each (In a Tube of 50) (ex VAT)

AED 214.99

AED 4.30 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 38 A, 60 V, 3-Pin TO-220 STP45NF06
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 50AED 4.095AED 204.75
100 - 450AED 3.045AED 152.25
500 - 950AED 2.572AED 128.62
1000 - 4950AED 2.10AED 105.00
5000+AED 1.942AED 97.12

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.15mm

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in