N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220 STMicroelectronics STP55NF06L

RS Stock No.: 485-7721Brand: STMicroelectronicsManufacturers Part No.: STP55NF06L
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

STripFET II

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

95 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

27 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Height

9.15mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 Toshiba TK35E08N1
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N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220 STMicroelectronics STP55NF06L
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AED 2.45

Each (In a Pack of 5) (ex VAT)

AED 2.572

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220 STMicroelectronics STP55NF06L
Stock information temporarily unavailable.
Select packaging type

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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You may be interested in
N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 Toshiba TK35E08N1
AED 5.355Each (In a Pack of 5) (ex VAT)

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

STripFET II

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

95 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

27 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Height

9.15mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 Toshiba TK35E08N1
AED 5.355Each (In a Pack of 5) (ex VAT)