STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L

RS Stock No.: 920-8809Brand: STMicroelectronicsManufacturers Part No.: STP60NF06L
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Width

4.6mm

Transistor Material

Si

Height

9.15mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 273.00

AED 5.46 Each (In a Tube of 50) (ex VAT)

AED 286.65

AED 5.733 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L

AED 273.00

AED 5.46 Each (In a Tube of 50) (ex VAT)

AED 286.65

AED 5.733 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 50AED 5.46AED 273.00
100 - 450AED 4.41AED 220.50
500 - 950AED 3.728AED 186.38
1000 - 4950AED 3.36AED 168.00
5000+AED 2.782AED 139.12

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Width

4.6mm

Transistor Material

Si

Height

9.15mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more