Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
104 nC @ 10 V
Transistor Material
Si
Height
15.75mm
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
AED 383.25
AED 7.665 Each (In a Tube of 50) (ex VAT)
AED 402.41
AED 8.048 Each (In a Tube of 50) (inc. VAT)
50
AED 383.25
AED 7.665 Each (In a Tube of 50) (ex VAT)
AED 402.41
AED 8.048 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | AED 7.665 | AED 383.25 |
| 100 - 450 | AED 5.985 | AED 299.25 |
| 500 - 950 | AED 5.092 | AED 254.62 |
| 1000 - 4950 | AED 4.305 | AED 215.25 |
| 5000+ | AED 4.095 | AED 204.75 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
104 nC @ 10 V
Transistor Material
Si
Height
15.75mm
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


