STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 STP60NF10

RS Stock No.: 168-7516Brand: STMicroelectronicsManufacturers Part No.: STP60NF10
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

104 nC @ 10 V

Transistor Material

Si

Height

15.75mm

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 383.25

AED 7.665 Each (In a Tube of 50) (ex VAT)

AED 402.41

AED 8.048 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 STP60NF10

AED 383.25

AED 7.665 Each (In a Tube of 50) (ex VAT)

AED 402.41

AED 8.048 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 STP60NF10
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 50AED 7.665AED 383.25
100 - 450AED 5.985AED 299.25
500 - 950AED 5.092AED 254.62
1000 - 4950AED 4.305AED 215.25
5000+AED 4.095AED 204.75

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

104 nC @ 10 V

Transistor Material

Si

Height

15.75mm

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more