Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220
Series
STripFET II
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
117 nC @ 10 V
Width
4.6mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
AED 12.57
AED 12.57 Each (ex VAT)
AED 13.20
AED 13.20 Each (inc. VAT)
Standard
1
AED 12.57
AED 12.57 Each (ex VAT)
AED 13.20
AED 13.20 Each (inc. VAT)
Standard
1
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Please check again later.
quantity | Unit price |
---|---|
1 - 9 | AED 12.57 |
10 - 99 | AED 10.66 |
100 - 499 | AED 8.55 |
500 - 999 | AED 7.52 |
1000+ | AED 6.44 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220
Series
STripFET II
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
117 nC @ 10 V
Width
4.6mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.