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N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220FP STMicroelectronics STP80NF10FP

RS Stock No.: 920-6572Brand: STMicroelectronicsManufacturers Part No.: STP80NF10FP
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Typical Gate Charge @ Vgs

135 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.3mm

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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AED 437.50

AED 8.75 Each (In a Tube of 50) (ex VAT)

AED 459.38

AED 9.188 Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220FP STMicroelectronics STP80NF10FP

AED 437.50

AED 8.75 Each (In a Tube of 50) (ex VAT)

AED 459.38

AED 9.188 Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220FP STMicroelectronics STP80NF10FP
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 50AED 8.75AED 437.50
100 - 450AED 7.45AED 372.50
500 - 950AED 6.70AED 335.00
1000 - 4950AED 6.35AED 317.50
5000+AED 5.35AED 267.50

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Typical Gate Charge @ Vgs

135 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.3mm

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in