Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
8A
Maximum Drain Source Voltage Vds
900V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
1.3Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
72nC
Maximum Power Dissipation Pd
160W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Width
4.6 mm
Length
10.4mm
Height
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 7.66
AED 7.66 Each (ex VAT)
AED 8.04
AED 8.04 Each (inc. VAT)
Standard
1
AED 7.66
AED 7.66 Each (ex VAT)
AED 8.04
AED 8.04 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 1 | AED 7.66 |
| 2+ | AED 7.30 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
8A
Maximum Drain Source Voltage Vds
900V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
1.3Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
72nC
Maximum Power Dissipation Pd
160W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Width
4.6 mm
Length
10.4mm
Height
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details


