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N-Channel MOSFET, 5 A, 60 V, 8-Pin SOIC STMicroelectronics STS5NF60L

RS Stock No.: 795-8868Brand: STMicroelectronicsManufacturers Part No.: STS5NF60L
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Series

DeepGate, STripFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

17 nC @ 5 V

Width

4mm

Transistor Material

Si

Height

1.65mm

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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AED 4.40

Each (In a Pack of 10) (ex VAT)

AED 4.62

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 5 A, 60 V, 8-Pin SOIC STMicroelectronics STS5NF60L
Select packaging type

AED 4.40

Each (In a Pack of 10) (ex VAT)

AED 4.62

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 5 A, 60 V, 8-Pin SOIC STMicroelectronics STS5NF60L
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 40AED 4.40AED 44.00
50 - 90AED 4.20AED 42.00
100 - 240AED 3.80AED 38.00
250 - 490AED 3.45AED 34.50
500+AED 3.35AED 33.50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Series

DeepGate, STripFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

17 nC @ 5 V

Width

4mm

Transistor Material

Si

Height

1.65mm

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more