Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Width
4 mm
Height
1.65mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 34.78
AED 3.478 Each (In a Pack of 10) (ex VAT)
AED 36.52
AED 3.652 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 34.78
AED 3.478 Each (In a Pack of 10) (ex VAT)
AED 36.52
AED 3.652 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Width
4 mm
Height
1.65mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


