Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Series
STripFET V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-22 V, +22 V
Typical Gate Charge @ Vgs
14 nC @ 5 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
2.4mm
Height
6.9mm
Product details
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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AED 3.40
Each (In a Pack of 5) (ex VAT)
AED 3.57
Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 3.40
Each (In a Pack of 5) (ex VAT)
AED 3.57
Each (In a Pack of 5) (inc. VAT)
Standard
5
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Series
STripFET V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-22 V, +22 V
Typical Gate Charge @ Vgs
14 nC @ 5 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
2.4mm
Height
6.9mm
Product details
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.