Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10.5A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
750mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
87nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
AED 359.52
AED 11.984 Each (In a Tube of 30) (ex VAT)
AED 377.50
AED 12.583 Each (In a Tube of 30) (inc. VAT)
30
AED 359.52
AED 11.984 Each (In a Tube of 30) (ex VAT)
AED 377.50
AED 12.583 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 60 | AED 11.984 | AED 359.52 |
| 90 - 480 | AED 9.576 | AED 287.30 |
| 510 - 960 | AED 8.506 | AED 255.20 |
| 990 - 4980 | AED 7.276 | AED 218.28 |
| 5010+ | AED 7.116 | AED 213.46 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10.5A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
750mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
87nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details


