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N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 STMicroelectronics STW24N60M2

RS Stock No.: 783-3090Brand: STMicroelectronicsManufacturers Part No.: STW24N60M2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

15.75mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Width

5.15mm

Number of Elements per Chip

1

Height

20.15mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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AED 59.00

AED 11.80 Each (In a Pack of 5) (ex VAT)

AED 61.95

AED 12.39 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 STMicroelectronics STW24N60M2
Select packaging type

AED 59.00

AED 11.80 Each (In a Pack of 5) (ex VAT)

AED 61.95

AED 12.39 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 STMicroelectronics STW24N60M2
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 20AED 11.80AED 59.00
25 - 45AED 11.20AED 56.00
50 - 120AED 10.20AED 51.00
125 - 245AED 9.30AED 46.50
250+AED 9.00AED 45.00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

15.75mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Width

5.15mm

Number of Elements per Chip

1

Height

20.15mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more