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N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STMicroelectronics STW28N60M2

RS Stock No.: 829-1507Brand: STMicroelectronicsManufacturers Part No.: STW28N60M2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.75mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Width

5.15mm

Minimum Operating Temperature

-55 °C

Height

20.15mm

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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AED 30.10

AED 15.05 Each (In a Pack of 2) (ex VAT)

AED 31.60

AED 15.802 Each (In a Pack of 2) (inc. VAT)

N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STMicroelectronics STW28N60M2
Select packaging type

AED 30.10

AED 15.05 Each (In a Pack of 2) (ex VAT)

AED 31.60

AED 15.802 Each (In a Pack of 2) (inc. VAT)

N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STMicroelectronics STW28N60M2
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
2 - 8AED 15.05AED 30.10
10 - 18AED 14.30AED 28.60
20 - 48AED 12.95AED 25.90
50 - 98AED 11.90AED 23.80
100+AED 11.45AED 22.90

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.75mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Width

5.15mm

Minimum Operating Temperature

-55 °C

Height

20.15mm

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more