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STMicroelectronics MDmesh M2 N-Channel MOSFET, 32 A, 650 V, 3-Pin TO-247 STW40N65M2

RS Stock No.: 876-5727Brand: STMicroelectronicsManufacturers Part No.: STW40N65M2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

56.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.15mm

Forward Diode Voltage

1.6V

Country of Origin

China

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

AED 27.60

AED 27.60 Each (ex VAT)

AED 28.98

AED 28.98 Each (inc. VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 32 A, 650 V, 3-Pin TO-247 STW40N65M2
Select packaging type

AED 27.60

AED 27.60 Each (ex VAT)

AED 28.98

AED 28.98 Each (inc. VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 32 A, 650 V, 3-Pin TO-247 STW40N65M2
Stock information temporarily unavailable.
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quantityUnit price
1 - 4AED 27.60
5 - 9AED 26.21
10 - 24AED 23.59
25 - 49AED 21.22
50+AED 20.14

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

56.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.15mm

Forward Diode Voltage

1.6V

Country of Origin

China

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more