N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STMicroelectronics STW45N65M5
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Number of Elements per Chip
1
Width
5.15mm
Height
20.15mm
Country of Origin
China
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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AED 838.50
AED 27.95 Each (In a Tube of 30) (ex VAT)
AED 880.42
AED 29.348 Each (In a Tube of 30) (inc. VAT)
30
AED 838.50
AED 27.95 Each (In a Tube of 30) (ex VAT)
AED 880.42
AED 29.348 Each (In a Tube of 30) (inc. VAT)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Number of Elements per Chip
1
Width
5.15mm
Height
20.15mm
Country of Origin
China
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products