STMicroelectronics MDmesh DM2 N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.15mm
Forward Diode Voltage
1.6V
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
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AED 47.36
AED 47.36 Each (ex VAT)
AED 49.73
AED 49.73 Each (inc. VAT)
Standard
1
AED 47.36
AED 47.36 Each (ex VAT)
AED 49.73
AED 49.73 Each (inc. VAT)
Standard
1
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| quantity | Unit price |
|---|---|
| 1 - 4 | AED 47.36 |
| 5 - 9 | AED 45.83 |
| 10 - 24 | AED 42.37 |
| 25 - 49 | AED 39.22 |
| 50+ | AED 37.90 |
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.15mm
Forward Diode Voltage
1.6V
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products