Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
84 nC @ 10 V
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Minimum Operating Temperature
-50 °C
Height
20.15mm
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
AED 463.05
AED 15.435 Each (In a Tube of 30) (ex VAT)
AED 486.20
AED 16.207 Each (In a Tube of 30) (inc. VAT)
30
AED 463.05
AED 15.435 Each (In a Tube of 30) (ex VAT)
AED 486.20
AED 16.207 Each (In a Tube of 30) (inc. VAT)
30
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
84 nC @ 10 V
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Minimum Operating Temperature
-50 °C
Height
20.15mm
Product details